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12NM80G-TQ2-R N-channel Super-Junction MOSFET 12A 800V

Sku:

12NM80G-TQ2-R

Unisonic Super Junction MOSFETs have low on-state resistance and high voltage ratings with rugged avalanche characteristics. They are designed for fast and efficient switching with low gate charge and fast recovery times.

Super Junction Silicon MOSFETs offer a cost advantage over Silicon Carbide (SiC) and Gallium Nitride (GaN) MOSFETs.

They are ideally suited to power conversion in AC-DC converters and high voltage DC-DC Converters.

Technical Specification
Drain Source Voltage 800V
Drain Current 12A
Power 86W
On-state Resistance 0.42Ω
Reverse Recovery Time -
Total Gate Charge (Qg) 50nC
Part Description Super-junction MOSFET

Applications

UK Customers

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