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8NM120G-TF1-T N-channel Super-Junction MOSFET 8A 1200V

Sku:

8NM120G-TF1-T

Unisonic Super Junction MOSFETs have low on-state resistance and high voltage ratings with rugged avalanche characteristics. They are designed for fast and efficient switching with low gate charge and fast recovery times.

Super Junction Silicon MOSFETs offer a cost advantage over Silicon Carbide (SiC) and Gallium Nitride (GaN) MOSFETs.

They are ideally suited to power conversion in AC-DC converters and high voltage DC-DC Converters.

Technical Specification
Drain Source Voltage 1200V
Drain Current 8A
Power 29W
On-state Resistance 1.35Ω
Reverse Recovery Time -
Total Gate Charge (Qg) 52nC
Part Description Super-junction MOSFET

Applications

UK Customers

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