• Alternate parts in the family(Compare): S6R2008C1A
  • Moisture sensitivity level: 3
  • RoHS 3(EU 2015/863)
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S6R2008C1A-UI10 2Mbit Asynchronous Fast SRAM

Sku:

S6R2008C1A-UI10

Features
  • Fast Access Time - from 8ns
  • CMOS Low Power Dissipation
  • TTL Compatible Inputs and Outputs
  • Fully Static Operation, No Clock or Refresh required
  • Three State Outputs
  • Industrial Temperature Range
  • Long Term Supply Commitment

    The high-speed Static Random Access Memory uses common input and output lines to simplify layout. There is an output enable pin which operates faster than address access time at read cycle so there is no los of speed.

    The Memory allows that lower and upper byte access by data byte control(UB, LB).

    The device is fabricated using advanced CMOS process, 6-TR based cell technology for reliable and cost effective performance, ideally suited for high-speed circuit technology.

    The Memory is packaged in industry standard packages.

    Technical Specification
    Access Time 10ns
    Memory Size 2Mbit
    Organisation 256K x 8
    Supply Voltage 5V
    Access Time (Family) 10ns

    UK Customers

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