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UT3419G-AE3-R P Channel Enchancement Mode Power Mosfet
Features
RDS(ON) ≤ 75mΩ @ VGS =-10V, ID =-3.5A RDS(ON) ≤ 95mΩ @ VGS =-4.5V, ID =-3.0A RDS(ON) ≤ 145mΩ @ VGS =-2.8V, ID =-1.0A
The UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS(ON) , low gate charge. The gate voltage is as low as 2.5V.
The part can be applied in PWM applications or used as a load switch.
Technical Specification
Drain Source Voltage
-20V
Drain Current
-μ0.5A
Power
1.4W
On-state Resistance
0.059Ω
Reverse Recovery Time
9.8ns
Total Gate Charge (Qg)
5.5nC
Part Description
-
UK Customers
Orders below £100.00 can be delivered by 1st Class Post at a rate of £3.50 (allow 3-5 working days) or a next working day tracked courier at a rate of £9.00.
Orders above £100.00 are delivered by a next working day tracked courier at a rate of £9.00.
All prices shown exclude VAT.
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