• Alternate parts in the family(Compare): UT4101G
  • Moisture sensitivity level: 1
  • RoHS 3(EU 2015/863)
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UT4101G-AE3-R P-Channel Enhancement mode Power MOSFET

Sku:

UT4101G-AE3-R

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Features
  • Fast switching speed
  • Low on resistance
  • Low gate voltage operation

    The UTC UT4101G is P-channel enhancement mode Power MOSFET, designed with high cell density, fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages.

    This device is suitable for use as a load switch or in PWM applications.

    Technical Specification
    Drain Source Voltage -20V
    Drain Current -2.4A
    Power 1.25W
    On-state Resistance 0.21Ω
    Reverse Recovery Time 12.8ns
    Total Gate Charge (Qg) 7.5nC
    Part Description -

    UK Customers

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