-
Audio
-
Amplifiers
Pre-amplifiers
Transistors
Balanced I/O
Power Management
Dynamics Processors
Special Function
-
-
Industrial
-
Power Management
Discrete Semiconductors
Op-amps and Comparators
IIoT Memory
Sensor Technology
Alarms and Monitoring
-
-
Partners
-
Applications
- Why Profusion?
- News
- Contact
-
Store
Active
UT4101G-AE3-R P-Channel Enhancement mode Power MOSFET
Sku:
UT4101G-AE3-R
Features
- Fast switching speed
- Low on resistance
- Low gate voltage operation
The UTC UT4101G is P-channel enhancement mode Power MOSFET, designed with high cell density, fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
Drain Source Voltage | -20V |
---|---|
Drain Current | -2.4A |
Power | 1.25W |
On-state Resistance | 0.21Ω |
Reverse Recovery Time | 12.8ns |
Total Gate Charge (Qg) | 7.5nC |
Part Description | - |
UK Customers
Orders below £100.00 can be delivered by 1st Class Post at a rate of £3.50 (allow 3-5 working days) or a next working day tracked courier at a rate of £9.00.
Orders above £100.00 are delivered by a next working day tracked courier at a rate of £9.00.
All prices shown exclude VAT.